Перегляд за автором "Olikhovskii, S.I."

Результати 1-5 з 5

Comprehensive investigation of defects in highly perfect silicon single crystals

Prokopenko, I.V.; Kislovskii, E.N.; Olikhovskii, S.I.; Tkach, V.M.; Lytvyn, P.M.; Vladimirova, T.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and ...
Double- and triple-crystal X-ray diffractometry of microdefects in silicon

Molodkin, V.B.; Olikhovskii, S.I.; Kyslovskyy, Ye.M.; Len, E.G.; Reshetnyk, O.V.; Vladimirova, T.P.; V.V. Lizunov, V.V.; Lizunova, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)

The generalized dynamical theory of X-ray scattering by real single crystals allows to self-consistently describe intensities of coherent and diffuse scattering measured by double- and triple-crystal diffractometers (DCD ...
Dynamical Theory of Triple-Crystal X-ray Diffractometry and Characterization of Microdefects and Strains in Imperfect Single Crystals

Molodkin, V.B.; Olikhovskii, S.I.; Len, E.G.; Kyslovskyy, Ye.M.; Reshetnyk, O.V.; Vladimirova, T.P.; Sheludchenko, B.V.; Skakunova, E.S.; Lizunov, V.V.; Kochelab, E.V.; Fodchuk, I.M.; Klad’ko, V.P. (Металлофизика и новейшие технологии, 2016)

A short review of basic principles and limitations in obtaining the analytical expressions for the coherent and diffuse scattering intensities measured by the triple-crystal diffractometer (TCD) are presented. Explicit ...
Quantum-Mechanical Model of Interconsistent Amplitude and Dispersion Influences of Structure Imperfections on the Multiple Scattering Pattern for Mapping and Characterization of Strains and Defects in Ion-Implanted Garnet Films

Molodkin, V.B.; Olikhovskii, S.I.; Skakunova, E.S.; Len, E.G.; Kislovskii, E.N.; Reshetnyk, O.V.; Vladimirova, T.P.; Lizunov, V.V.; Skapa, L.N.; Lizunova, S.V.; Fuzik, E.V.; Tolmachev, N.G.; Ostafiychuk, B.K.; Pylypiv, V.M.; Garpul’, O.Z. (Металлофизика и новейшие технологии, 2015)

Numerical simulation of the reciprocal-space maps for ion-implanted single-crystal yttrium—iron garnet films on gadolinium—gallium garnet substrates is carried out and based on the theoretical model of the triple-axes ...
Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field

Vladimirova, T.P.; Kyslovs’kyy, Ye.M.; Molodkin, V.B.; Olikhovskii, S.I.; Koplak, O.V.; Kochelab, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)

Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by ...

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Перегляд за автором "Olikhovskii, S.I."

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Перегляд за автором "Olikhovskii, S.I."

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